Loading...
Effective properties of undoped and Indium3+-doped tin manganese telluride (Sn1 − xMnxTe) nanoparticles via using a chemical bath deposition route
Author(s)
Date Issued
June 9, 2017
Type
Article
Abstract
Tin manganese telluride nanoparticles (Sn1−xMnxTe NPs) were first synthesized on a niobium pentoxide (Nb2O5) film using a chemical bath deposition (CBD) route. An individual particle size before and after indium (In3+) doping of ∼70–150 nm was investigated with stoichiometric formation of the SnMnTe phase. Furthermore, a cubic or rocksalt structure of the Sn0.938Mn0.062Te phase was also kept incorporated in the structure. The plotted energy band gaps for undoped and In3+-doped samples were 2.17 and 1.83 eV, respectively. The reduction of photoluminescence (PL) spectra after In3+ doping, while the indium dopant acted as a trap state incorporated in Sn1−xMnxTe NPs, showed enhanced charge separation and reduced charge recombination, which resulted in a higher charge density trapped in the conduction band of Nb2O5 and was also confirmed by the result of anodic peaks in the cyclic voltammetry. These results suggest new possibilities in optoelectronic and electrochemical devices.
Citation
Physics Letters Section A General Atomic and Solid State Physics, 381(21), 1807-1814, 2017