Publication:
Effect of horizontal magnetic field on magnetoresistance

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Abstract

The effect of horizontal magnetic field on magnetoresistance was studied by TCAD simulation. At low concentration 1014 and 1015 cm-3, the magnetoresistance linearly depends on magnetic field density and direction. The percent of magnetoresistance (%MR) of this study is less than 1 % at biased current 1 mA, 0.5 T. The unbalance between Lorentz's force FL and Hall electrical force FH causes this effect. The positive and negative % MR of magnetic field in -y and y direction are caused by FL > FH. At the high concentration 1016 - 1019 cm-3, the Lorentz's force and Hall electrical force are nearly equal. The magnetoresistance is a little bit positive both in -y and y magnetic field direction which are caused by FL > FH and FH > FL, respsctively.

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Hall Effect, Horizontal Magnetic Field, Magnetoresistance, TCAD

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Ecti Con 2018 15th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology, 209-212, 2018

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