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Structural, Optical, and Electrical Properties of Sputtered ZnO Thin Films and Their Application in Transparent Memory Devices
Author(s)
Date Issued
December 1, 2022
Type
Article
Abstract
We report on the fabrication of ZnO thin films using a lab-made DC sputtering process. The ZnO films were prepared at several applied sputter voltages at fixed deposition times. The properties of the deposited films were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, field-emission scanning electron microscopy, and UV–visible spectroscopy. The ZnO thin films exhibited a polycrystalline phase in the dominant (100) plane, with film thicknesses in the order of approximately 50–80 nm. In addition, a transparent memory device based on the ZnO film was successfully fabricated with a device structure of ITO/ZnO/EVA/ITO. The fabricated device exhibited high optical transparency of approximately 70% in the visible light region. The fabricated memory device demonstrated memory properties with a maximum ON/OFF current ratio of 4.66 × 103 and showed good retention properties.
Citation
Journal of Electronic Materials, 51(12), 6903-6912, 2022