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The mechanism of dual schottky magnetodiode

Author(s)
Phetchakul, T.
Luanatikomkul, W.
Yamwong, W.
Poyai, A.
Date Issued
October 2, 2012
Type
Conference Paper
DOI
10.1109/ECTICon.2012.6254188
Abstract
This paper presents the mechanism of dual schottky magnetodiode. The device can operate both in forward and reverse biasing for magnetic field sensor. Two modes of operation show linearity which electron is only type of carrier. In forward bias, the deflected electrons in n-type semiconductor cathode are injected to metal anode. In reverse bias, the electrons from metal anode are injected and continuously deflected in n-type semiconductor cathode. Comparison of two modes at the same current shows the same sensitivity. © 2012 IEEE.
Citation
2012 9th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology Ecti Con 2012, 2012
Subjects

Magnetodiode

Schottky Junction

Sentaurus TCAD

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