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Preparation and properties indium tin-oxide thin films by RF sputtered for photodetectors
Author(s)
Date Issued
January 1, 2008
Type
Conference Paper
Abstract
This paper descript studying and preparation indium-tin oxide (ITO) thin film from method 90 wt.% ln2O3 and 10 wt.% SnO2 formula target with 99.99% purity on glass slide by RF reactive sputtering method at room temperature. This paper, sputtering time 5, 15, 30 and 60 mins. Thin films ITO were measured crystallization, optical and electrical characteristic by an X-ray diffractometer (XRD), scan electron microscopy (SEM) , Four Point Probe and UV-VIS spectrophotometry. The results found that thin films which made from RF sputtering method had a high crystallization, order arrangement grain. Strong peak of XRD (400) and (441), low resistivity are 2.2 × 10-3 4.4 × 10-3 1 × 10-3 and 7 × 10-4 β-cm, transmittance are 82%, 84%, 87% and 89%, respectively. The overall experimental results identify that fabricated thin films ITO have good properties and is suitable for transparent electrode application. The ultimate goal is developing schottky photodetector. © 2008 Trans Tech Publications, Switzerland.
Citation
Advanced Materials Research, 55-57, 769-772, 2008