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Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation
Author(s)
He, G.
Ghosh, K.
Singisetti, U.
Bohra, G.
Matsunaga, M.
Higuchi, A.
Aoki, N.
Najmaei, S.
Gong, Y.
Zhang, X.
Vajtai, R.
Ajayan, P. M.
Bird, J. P.
Date Issued
August 12, 2015
Type
Article
Abstract
We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals and demonstrate excellent current saturation at large drain voltages (Vd). The low-field characteristics of these devices indicate that the electron mobility is likely limited by scattering from charged impurities. The current-voltage characteristics exhibit variable range hopping at low Vd and evidence of velocity saturation at higher Vd. This work confirms the excellent potential of MoS2 as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action.
Citation
Nano Letters, 15(8), 5052-5058, 2015