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Electrical switching and conduction mechanisms of nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polyvinylpyrrolidone
Author(s)
Date Issued
January 1, 2014
Type
Article
Abstract
We reported on the influence of zinc oxide nanoparticles (ZnO NPs) on the electrical bistable behavior of nonvolatile write-once-read-many-times (WORM) memory devices based on an indium-tin oxide/polyvinylpyrrolidone (PVP):ZnO NPs/aluminum (ITO/PVP:ZnO/Al) structure. The maximum ON/OFF current ratio of the nonvolatile WORM memory devices was approximately 3 × 103 and the devices remained in the ON state even after the applied voltage was turned off. In addition, reliability studies for response time and once write/continuous read operations of the optimal ZnO NPs concentration are presented. The response times of both rise-time and fall-time were about 3 and 6 μs respectively. The conduction mechanisms of all voltage regions of the device were analyzed by theoretical models and electron trapping in the ZnO NPs of the electron tunneling among a PVP matrix was discussed. © 2014 Elsevier B.V. All rights reserved.
Citation
Organic Electronics, 15(6), 1254-1262, 2014