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Hole doping through indium intercalation into copper phthalocyanine
Author(s)
Jaruvanawat, Anuchit
Prajuabwan, Pakorn
Rojanasuwan, Sunit
Chanhom, Annop
Date Issued
October 29, 2013
Type
Conference Paper
Abstract
A blend of molecular acceptor and molecular donor made of Copper Phthalocyanine (CuPc) and Indium in various ratios were evaporated in high vacuum on to intrinsic silicon substrates by using vacuum thermal co-evaporation technique. Electronic properties of In-doped CuPc thin films have been examined by X-ray photoelectron spectroscopy (XPS). The results obtained by XPS suggests that In-doped CuPc is a hole transport material. © (2013) Trans Tech Publications, Switzerland.
Citation
Advanced Materials Research, 802, 273-278, 2013