On laterally spreading of space-charge-region in planar metal-semiconductor-metal structures

Abstract

Lateral spreading along the surface of space-charge-region (SCR) of planar metal-semiconductor-metal (MSM) structures has been investigated. Planar MSM structures have been attracted much attention as viable optical sensor structures. For this purpose, the SCR of such a structure plays a key role in generating photocurrent and thus, in dc (static) and/or low frequency scheme, the wider SCR along the active surface is the better from the efficiency point of view. To study the spreading properties of the SCR along the surface of MSM structures, we prepared planar MSM structures leaving the undepleted region between the electrodes. We examined their SCR spreading through the photocurrent-bias voltage characteristics. The experimental results were compared with the numerical simulation using a quasi-1D (one-dimensional) model of such a planar structure. It was found that the change in the photocurrents is proportional to the square root of the bias applied, implying that the current varies with the lateral spreading of the SCR. Further, the value of the surface spreading of the SCR might be roughly equal to the results predicted from the numerical simulation. These results also suggest that the effective photocurrent generation is occurring principally at the very surface of the SCR. © 2003 Elsevier Ltd. All rights reserved.