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Electrical characteristics of different gate geometry of FinFET
Author(s)
Patcharasardtra, Nuttapong
Date Issued
January 1, 2016
Type
Conference Paper
Abstract
This paper proposed to the electrical characteristics of difference gate geometry of FinFET. Four of difference gate structure have been designed and simulated by GTS Framework TCAD software which is simulation the characteristics of FinFET device include drain currentvoltage, threshold voltage and subthreshold swing. Then, the electrical characteristics was compared. From the result found that the drain current depend on gate geometry of FinFET. The largest gate geometry of FinFET device was the rectangle shape with gate width at 66 nm, IDS about 19.8 mA and VTH = 0.5 V and the smallest gate geometry, the triangle shape with gate width at 52 nm and give IDS about 8.5 mA and Vth = 0.5 V.
Citation
Key Engineering Materials, 705, 174-178, 2016