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Effect of annealing process on the properties of undoped and manganese2+-doped co-binary copper telluride and tin telluride thin films
Author(s)
Kladkaew, Meaunfun
Samranlertrit, Norasate
Vailikhit, Veeramol
Tubtimtae, Auttasit
Date Issued
April 15, 2018
Type
Article
Abstract
The binary semiconductor materials Cu1.81Te and SnTe materials, without and with manganese (Mn2+) doping, were prepared by dropping a Cu-Sn-Te solution on a commercial glass substrate to fabricate a co-binary thin film. The characteristics, optical, and electrical properties of undoped and Mn2+-doped Cu1.81Te/SnTe thin films were investigated with variations in the annealing process. The XRD results confirmed the films consisted of the co-binary orthorhombic phase materials Cu1.81Te and SnTe, and that for all annealing temperatures from 50 to 400 °C an amorphous structure became prevalent in the Mn2+-incorporated co-binary thin films. The optical parameters and electrical performance varied with the annealing temperatures and Mn2+ doping, showing alterations in the properties of the co-binary film. These co-binary thin films have feasibility for real applications in surface analysis, electro-optical materials, solar selective surfaces, and photovoltaic thermal devices.
Citation
Ceramics International, 44(6), 7186-7201, 2018