Effect of annealing process on the properties of undoped and manganese2+-doped co-binary copper telluride and tin telluride thin films

Abstract

The binary semiconductor materials Cu1.81Te and SnTe materials, without and with manganese (Mn2+) doping, were prepared by dropping a Cu-Sn-Te solution on a commercial glass substrate to fabricate a co-binary thin film. The characteristics, optical, and electrical properties of undoped and Mn2+-doped Cu1.81Te/SnTe thin films were investigated with variations in the annealing process. The XRD results confirmed the films consisted of the co-binary orthorhombic phase materials Cu1.81Te and SnTe, and that for all annealing temperatures from 50 to 400 °C an amorphous structure became prevalent in the Mn2+-incorporated co-binary thin films. The optical parameters and electrical performance varied with the annealing temperatures and Mn2+ doping, showing alterations in the properties of the co-binary film. These co-binary thin films have feasibility for real applications in surface analysis, electro-optical materials, solar selective surfaces, and photovoltaic thermal devices.