Switching Phenomena in Reverse-Biased Gold-Diffused Silicon p+-i-n+ Diodes

Supadech, S.; Heng, T.

doi:10.1109/PROC.1979.11304

Switching Phenomena in Reverse-Biased Gold-Diffused Silicon p+-i-n+ Diodes

Author(s)

Supadech, S.

Heng, T.

Date Issued

January 1, 1979

Type

Article

DOI

10.1109/PROC.1979.11304

Abstract

A novel mode of operation for a reverse-biased narrow i-region gold-diffused silicon p⁺-i-n⁺ diode exhibiting switching negative resistance is reported. The i-region width is in the range of 12–16 µm, and gold has been used to generate deep trapping levels in the i-region. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

Citation

Proceedings of the IEEE, 67(4), 692-693, 1979