Switching Phenomena in Reverse-Biased Gold-Diffused Silicon p+-i-n+ Diodes

Abstract

A novel mode of operation for a reverse-biased narrow i-region gold-diffused silicon p+-i-n+ diode exhibiting switching negative resistance is reported. The i-region width is in the range of 12–16 µm, and gold has been used to generate deep trapping levels in the i-region. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.