Fabrication and modeling of organic thin-film transistor on glass substrate

Abstract

Organic thin film transistors have been fabricated using pentacene as an active material. Aluminium gate electrodes, pentacene active layers and gold source-drain contacts were fabricated on glass substrate using thermal evaporation though metallic mask. Gate dielectric layers were processed by solution-process spin-coating. The fabricated transistor exhibited the maximum carrier mobility of 0.01 cm2/V-s and the on/off current current ratio over 400. © 2008 IEEE.