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Minority carrier lifetime controlling of mesa diodes by electron beam irradiation
Author(s)
Titthikusumarn, Wiwa
Jakpetch, Wittaya
Titiroongruang, Wisut
Date Issued
November 4, 2013
Type
Conference Paper
Abstract
Mesa diodes were irradiation by electron beam at various doses of 25, 50 and 75 kGy to find optimum dose for controlling minority carrier lifetime. The experiment result shows that electron beam can reduce minority carrier lifetime from 24.3 ns to 14.8, 9.5 ns and 7.9 at dose of 25, 50 and 75 kGy, respectively. However, the result of electron beam is not only reduce the lifetime but also effected to other electrical properties such as increasing in saturation current density about 2-3 times, increasing in reverse leakage current density about 3 times. Dominant cause of reverse leakage is increasing in generation current via center traps which formed by the irradiation. © (2013) Trans Tech Publications, Switzerland.
Citation
Advanced Materials Research, 811, 200-204, 2013