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Simulation of MOSFET as horizontal magnetic MOSFET (MAGFET)
Author(s)
Date Issued
December 14, 2017
Type
Conference Paper
Abstract
This work proposes the regular long channel MOSFET structure used as magnetic MOSFET (MOSFET that can detect magnetic field) in parallel direction (y-axis). The structure is regular MOSFET that has drain, gate, source and substrate (body). The mechanism of device is Hall effect in current mode between channel MOSFET current and substrate current in x-axis direction. The dimensions of channel MOSFET are 20 μm wide and 20 μm long. The channel and substrate currents are balance adjusted in the same values at 0.5, 1 and 1.5 mA. From the simulation results by TCAD sentaurus, the relative sensitivity of device is 0.01 T-1 in y and - y direction, respectively. It can be used as magnetic sensor for one dimension in parallel field.
Citation
Proceedings of 2017 2nd International Conference on Frontiers of Sensors Technologies Icfst 2017, 2017-January, 19-23, 2017