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The study of p-n and schottky junction for magnetodiode
Author(s)
Luanatikomkul, Wittaya
Leepattarapongpan, Chana
Chaowicharat, Ekalak
Pengpad, Putapon
Poyai, Amporn
Date Issued
January 1, 2012
Type
Conference Paper
Abstract
This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.
Citation
Advanced Materials Research, 378-379, 663-667, 2012