X-ray soft annealing process study for p-n junction diode

Abstract

The effect of X-ray soft annealing on the electrical properties of p-n junction diodes has been investigated. Under a forward bias of 1.0 V at 303 K, the forward current is approximately two orders of magnitude higher for X-ray annealed than for non-X-ray annealed samples. This effect is further investigated by evaluating the following properties under forward-bias conditions: ideality factor, saturation current, activation energy, series resistance, under reverse-bias conditions, carrier-generation lifetime, and activation energy. Results suggest that X-ray soft annealing improves the electrical properties of p-n junction diodes under forward-bias conditions.