A 1.5-V CMOS fully differential inductorless RF bandpass amplifier

Thanachayanont, Apintint

doi:10.1109/ISCAS.2001.921785

A 1.5-V CMOS fully differential inductorless RF bandpass amplifier

Author(s)

Thanachayanont, Apintint

Date Issued

December 1, 2001

Type

Conference Paper

DOI

10.1109/ISCAS.2001.921785

Abstract

This paper presents the design of a 1.5 V CMOS fully-differential inductorless RF bandpass amplifier using a 0.35 μm n-well CMOS technology. The bandpass amplifier employs a novel low-voltage floating active inductor as the tuned load. HSPICE simulation of the proposed bandpass amplifier operating at 1 GHz centre frequency and a quality factor of 50 illustrates that a 50 dB voltage gain and a 4.2 dB noise figure can be achieved with the total power dissipation of 46 mW under a 1.5 V power supply voltage. © 2001 IEEE.

Citation

Iscas 2001 2001 IEEE International Symposium on Circuits and Systems Conference Proceedings, 1, 49-52, 2001