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The effect injection width and temperature-offset compensation of magnetotransistor
Author(s)
Leepattarapongpan, Chana
Penpondee, Naritchaphan
Pengpad, Puttapon
Srihapat, Arckom
Jeamsaksiri, Wutthinan
Hruanun, Charndet
Poyai, Amporn
Date Issued
December 1, 2011
Type
Conference Paper
Abstract
This paper presents effect of injection witdh on Magnetotransistor. Emitter area was confined by LOCOS and the injection window size was varied from 4, 5 to 10 microns. With bias current of 3 mA the window size 4 micron gives best sensitivity at 10mV/T. Measument linearity is 0.1 % full scale. voltage gain of 10 was used for minimizing temperature coefficient to be around 7.9 mV/°C measured from 25 to 125 °C. Temperature coefficient divided by sensitivity give us a relative temperature sensitivity of 7.9 % T/°C. Second magnetic sensor device has been used for temperature compensation. The second device was config as magnetic field immune then it was used as a temperature offset voltage reference. The added module reduces overall temperature sensitivy down to 0.3 % T/°C. © 2011 Published by Elsevier Ltd.
Citation
Procedia Engineering, 25, 1269-1272, 2011