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  4. Theoretically proposed stable polymorph of two-dimensional pentagonal β-PdPSe
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Theoretically proposed stable polymorph of two-dimensional pentagonal β-PdPSe

Author(s)
Dabsamut, Klichchupong
Chatratin, Intuon
Thanasarnsurapong, Thanasee
Maluangnont, Tosapol
Boonchun, Adisak
Date Issued
January 4, 2023
Type
Article
DOI
10.1039/d2cp04864g
Abstract
The theoretical discovery of new and stable 2D penta materials based on first-principles calculations has stimulated technological advances due to the anticipated exotic properties of such structures, which include the α and β phases of penta-NiPS. Inspired by the similarity between the theoretically proposed penta-NiPS and the experimentally synthesized (α phase) of penta-PdPSe, we propose herein the β phase of penta-PdPSe as a new penta-2D material. Comprehensive analyses indicated that β phase penta-PdPSe is thermodynamically, dynamically, mechanically, and thermally stable, similar to its NiPS analogue. It was found that β penta-PdPSe is a wide band gap semiconductor with an indirect band gap of 1.58 eV, significantly lower than 2.15 eV for the α phase. Moreover, the two polymorphs of penta-PdPSe are soft materials with 2D Young's modului of Ea = 151 N m−1 and Eb = 123 N m−1 for the β phase, compared with Ea = 155 N m−1 and Eb = 113 N m−1 for the α phase. The calculated absorption coefficient showed that β phase penta-PdPSe is acceptable for electronic and optical nanodevices.
Citation
Physical Chemistry Chemical Physics, 25(5), 3815-3819, 2023
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