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Study on schottky diode characteristics improving by X-ray irradiation
Author(s)
Klinsanit, Sani
Srithanachai, Itsara
Ueamanapong, Surada
Khunkhao, Sunya
Nararug, Budsara
Suriya-Amaranout, Chaba
Niemcharoen, Surasak
Date Issued
August 30, 2013
Type
Conference Paper
Abstract
The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode. © (2013) Trans Tech Publications Switzerland.
Citation
Advanced Materials Research, 717, 113-116, 2013