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The effect of ion implantation on ISFET-sensing membrane
Author(s)
Piyananjaratsri, R.
Bunjongpru, W.
Chaowicharat, E.
Trithaveesak, O.
Saeteaw, K.
Hruanun, C.
Poyai, A.
Date Issued
February 5, 2010
Type
Conference Paper
Abstract
This research studied the effect of ion implantation on electrical properties of ISFETs. In the experiments the sensing membrane area were implanted with 3 types of ions (Boron(B), Phosphorus(P), and Arsenic(As)). After the implantation without annealing, the IV-characteristics of Source/Drain (P-N junction) of ISFET were performed and compared with the behaviour before implantation. In addition, the response to acid-alkaline (sensitivity) of ISFET were also studied. From the results the leakage current of source-drain, P-N junction like, decreases significantly after the implantation. However, this process damaged the devices so that the response to acid-alkaline are lost. © (2010) Trans Tech Publications.
Citation
Advanced Materials Research, 93-94, 133-136, 2010