A 0.1 -W CMOS class-E power amplifier for bluetooth applications

Luengvongsakorn, Phairoj; Thanachayanont, Apinunt

A 0.1 -W CMOS class-E power amplifier for bluetooth applications

Author(s)

Luengvongsakorn, Phairoj

Thanachayanont, Apinunt

Date Issued

December 1, 2003

Type

Conference Paper

Abstract

This paper describes the design of a CMOS class-E RF power amplifier for Bluetooth applications in a standard 0.35-μm CMOS technology. Simulation results using Spectre with MOS level 49 parameters show that the power amplifier can deliver 100 mW output power to 50-ω load at 2.4GHz with 64 % drain efficiency and 59 % power-added-efficiency respectively under a single supply voltage of 2.5 V.

Citation

IEEE Region 10 Annual International Conference Proceedings TENCON, 4, 1348-1351, 2003