Repository logo
Communities & Collections
Research Outputs
Fundings & Projects
People
Statistics
New user? Click here to register.Have you forgotten your password?
  1. Home
  2. KMITL
  3. Publication
  4. Alternating current properties of bulk- and nanosheet-graphitic carbon nitride compacts at elevated temperatures
Loading...
Thumbnail Image

Alternating current properties of bulk- and nanosheet-graphitic carbon nitride compacts at elevated temperatures

Author(s)
Maluangnont, Tosapol
Pulphol, Phieraya
Chaithaweep, Kanokwan
Dabsamut, Klichchupong
Kobkeatthawin, Thawanrat
Smith, Siwaporn Meejoo
Boonchun, Adisak
Vittayakorn, Naratip
Date Issued
August 23, 2023
Type
Article
DOI
10.1039/d3ra04520j
Abstract
The investigations of temperature-dependent electrical properties in graphitic carbon nitride (g-C3N4) have been largely performed at/below room temperature on devices commonly fabricated by vacuum techniques, leaving the gap to further explore its behaviors at high-temperature. We reported herein the temperature dependence (400 → 35 °C) of alternating current (AC) electrical properties in bulk- and nanosheet-g-C3N4 compacts simply prepared by pelletizing the powder. The bulk sample was synthesized via the direct heating of urea, and the subsequent HNO3-assisted thermal exfoliation yielded the nanosheet counterpart. Their thermal stability was confirmed by variable-temperature X-ray diffraction, demonstrating reversible interlayer expansion/contraction upon heating/cooling with the thermal expansion coefficient of 2.2 × 10−5-3.1 × 10−5 K−1. It is found that bulk- and nanosheet-g-C3N4 were highly insulating (resistivity ρ ∼ 108 Ω cm unchanged with temperature), resembling layered van der Waals materials such as graphite fluoride but unlike electronically insulating oxides. Likewise, the dielectric permittivity ϵ′, loss tangent tan δ, refractive index n, dielectric heating coefficient J, and attenuation coefficient α, were weakly temperature- and frequency-dependent (103-105 Hz). The experimentally determined ϵ′ of bulk-g-C3N4 was reasonably close to the in-plane static dielectric permittivity (8 vs. 5.1) deduced from first-principles calculation, consistent with the anisotropic structure. The nanosheet-g-C3N4 exhibited a higher ϵ′ ∼ 15 while keeping similar tan δ (∼0.09) compared to the bulk counterpart, demonstrating its potential as a highly insulating, stable dielectrics at elevated temperatures.
Citation
Rsc Advances, 13(36), 25276-25283, 2023
Metrics
Get Involved!
  • Source Code
  • Documentation
  • Slack Channel
Make it your own

DSpace-CRIS can be extensively configured to meet your needs. Decide which information need to be collected and available with fine-grained security. Start updating the theme to match your Institution's web identity.

Need professional help?

The original creators of DSpace-CRIS at 4Science can take your project to the next level, get in touch!

Built with DSpace-CRIS software - Extension maintained and optimized by 4Science

  • Accessibility settings
  • Privacy policy
  • End User Agreement
  • Send Feedback