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Horizontal Magnetic Field MAGFET by Conventional MOSFET Structure
Author(s)
Nakachai, Rattapong
Poonsawat, Sawatdipong
Ruangphanit, Anucha
Poyai, Amporn
Date Issued
July 2, 2018
Type
Conference Paper
Abstract
The MOSFET used as magnetic field sensor is presented. It is a conventional structure that has a source, a gate, a drain and a substrate or body terminal which fabricated by standard CMOS process. It detects the horizontal y-direction magnetic field in parallel and perpendicular to currents. The device is biased for channel current and substrate current. The mechanism is Hall Effect in current mode. The induced Lorentz's force deflects currents between drain current and substrate forward current causes output differential current. The relation shows linearly dependence between magnetic field density and output differential current. The relative sensitivity depends on amount of bias currents.
Citation
Ieecon 2018 6th International Electrical Engineering Congress, 2018