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Extraction of defect in doping silicon wafer by analyzing the lifetime profile method
Author(s)
Date Issued
January 1, 2008
Type
Conference Paper
Abstract
The total leakage current in silicon p-n junction diodes compatible with 0.8 μm CMOS technology is investigated. The generation lifetime is a key parameter for the leakage current, which can be obtained from the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics. As will be shown, the electrically active defect from ion implantation process generated in p-n junction can be extracted from the generation current density. © 2008 Trans Tech Publications, Switzerland.
Citation
Advanced Materials Research, 55-57, 765-768, 2008