Effect of base width and implantation dose on performance of 3-terminal magnetotransistor

Woradet, Jaroenmit; Phetchakul, Toempong; Chareankid, Sompong; Pengchan, Weera; Klunngien, Nipapan; Hruanun, Charndet; Poyai, Amporn

doi:10.1109/ISICIR.2007.4441791

Effect of base width and implantation dose on performance of 3-terminal magnetotransistor

Author(s)

Woradet, Jaroenmit

Phetchakul, Toempong

Chareankid, Sompong

Pengchan, Weera

Klunngien, Nipapan

Hruanun, Charndet

Poyai, Amporn

Date Issued

December 1, 2007

Type

Conference Paper

DOI

10.1109/ISICIR.2007.4441791

Abstract

This paper presents the effect of base width and implantation dose on electrical carriers in the magnetotransistor deflected by the Lorentz force (FL) from magnetic field. The structure of magnetotransistor is designed like a structure of a PNP bipolar junction transistor which comprises of 3 terminals, i.e., emitter, collector and base. The base width (L) is varied (10, 20 and 30 μm) where the spacing between collector and base is fixed at 40 μm. The emitter and collector regions are doped with boron (BF 2) at the dose of 3×10¹⁵, 5×10¹⁵ and 1×10¹⁶ ions/cm². It is found that the sensitivity is increased when increasing L and the implantation dose. It is also demonstrated that the linear relationship between the output voltage of the magnetotransistor circuit and magnetic field can be obtained. © 2007 IEEE.

Citation

2007 International Symposium on Integrated Circuits Isic, 41-44, 2007