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Effect of temperature on 16 nm n-FiNFET
Author(s)
Date Issued
January 1, 2018
Type
Conference Paper
Abstract
This research presents the effect of temperature that influence to the performance of 16 nm SOI n-FinFET structure. The structure has created with structure tool on GTS Framework. The transistor has 1 nanometer HfO2 gate oxide with all metal contact and biased on Minimos-NT tool, with variation of temperatures from 300 K to 420 K with 30 K per step. The result found the decrease in saturation current, threshold voltage and mobility. The temperature brought electron and rose the density of electron as the potential from power supply that energized to the structure. They made mobility fall with them rising. The temperature makes a performance of FinFET structure.
Citation
Key Engineering Materials, 775 KEM, 260-265, 2018