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Effect of platinum substitution on the microstructures and dielectric relaxation of CaCu3Ti4O12 ceramics
Author(s)
Makcharoen, Worawut
Date Issued
October 29, 2013
Type
Conference Paper
Abstract
The CaCu3Ti4O12 (CCTO) has the advantage for the various applications especially for capacitive elements in microelectronic devices over the ferroelectric materials including BaTiO3. CCTO is a ceramic compound with a high dielectric constant but it has a high loss tangent at room temperature. In this work, the Influences of PtO2 doping on the dielectric properties of CaCu3Ti4O12 (CCTO) ceramics were investigate. The ceramics CCTO and PtO2 doping CCTO were studied by Xray diffraction, scanning electron microscopy. The dielectric properties have been measured as a function of temperature and frequency range 0.1 - 500 kHz. The XRD shows the CCTO structure does not changes after doping with platinum. The results show that PtO2 doped can reduce the mean grain sizes of CCTO, but the dielectric constant still remained a height. The samples of 2.0 mol% Pt-doped have exhibited high dielectric constant of about 22,000 and the loss tangent about 0.7 at room temperature and frequency at 10 kHz. The reduced of the loss tangent could be interpreted with the internal barrier layer capacitor model (IBLC) © (2013) Trans Tech Publications, Switzerland.
Citation
Advanced Materials Research, 802, 134-138, 2013