The MIIS structure capacitor fabricated with high permittivity material

Abstract

The MIIS (Metal Insulator Intrinsic Semiconductor) structure capacitor consists of the aluminum, ZnO insulator and n-Type silicon doped with gold atoms. The different electrical characteristics of the devices from the standard MOIS (Metal Oxide Intrinsic Semiconductor) structure capacitor which is fabricated from SiO2 are presented in this paper. The experimental results show that the threshold voltage of the devices (VTO) is smaller than the MOIS devices, the zinc oxide capacitor values (COX) are higher but the total capacitor value (CT) of the device does not change.