Disorder-induced f -electron localization in Nb and y co-doped CeO2

Charoonsuk, T.; Vittayakorn, N.; Kolodiazhnyi, T.

doi:10.1063/1.5022386

Disorder-induced f -electron localization in Nb and y co-doped CeO2

Author(s)

Charoonsuk, T.

Vittayakorn, N.

Kolodiazhnyi, T.

Date Issued

April 28, 2018

Type

Article

DOI

10.1063/1.5022386

Abstract

We report the effect of the charge compensation on the electronic transport and optical properties of CeO2 co-doped with donor, Nb, and acceptor, Y, ions. As expected, the concentration of Ce³⁺ decreases with an increase in the Y content in Ce0.992-xNb0.008YxO2, where 0 ≤ x ≤ 0.008. More importantly, random electric fields generated by the Y ions bring additional disorder into the system. As a result, the high-temperature activation energy of conductivity increases significantly from 189 to 430 meV. A similar energy shift in the optical absorption peak centered at 1.3-1.5 eV is attributed to an increase in the energy gap separating the localized f-electrons from the empty Ce 4f band. The results underline the paramount importance of the disorder-induced Anderson localization of the f-electrons in ceria.

Citation

Journal of Applied Physics, 123(16), 2018