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A comprehensive treatment of parametric effect in a silicon microring resonator

Author(s)
Nawi, I. N.M.
Ali, J.
Yupapin, P. P.
Date Issued
May 18, 2016
Type
Conference Paper
DOI
10.1109/SPC.2015.7473574
Abstract
Silicon microring resonator provides a new platform to form the building block for all-optical circuits, where it could be integrated on a single chip as a passive or active components. Here, we report a comprehensive treatment of parametric effect in a symmetrical add/drop silicon microring resonator with 5 μm radius operating within telecom wavelength spectrum or C-band ranging from 1530 nm to 1565 nm. The power outputs of the system are analyzed by using transfer matrix method. The FSR and FWHM have been optimized. The results demonstrated here will pave the way towards the new on-chip and chip-to-chip architecture and structure for low power and high bandwidth applications especially for all-optical switch and optical modulator.
Citation
Proceedings 2015 IEEE Conference on System Process and Control Icspc 2015, 140-145, 2016
Subjects

All-optical Switch

CMOS technology

DWDM network.

Silicon Microring res...

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