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An improvement of forward current of P-N diode using soft X-ray method
Author(s)
Rujanapich, Poopol
Srithanachai, Itsara
Ueamanapong, Surada
Poya, Amporn
Niemcharoen, Surasak
Titiroongruang, Wisut
Date Issued
February 1, 2013
Type
Article
Abstract
We present the experimental investigation of platinum doped P-N junction diodes that they were fabricated by using a CMOS technology. The effect of soft X-ray annealing technique on the device is investigated and the device performance improvement observed. The current-voltage (I-V) characteristics of the diodes were measured at room temperature. The forward current before and after irradiation can be explained relatively to the carrier recombination lifetime (τr). After irradiation, at 55 and 70 keV for 55 and 205 seconds, the small change in leakage current is noted. However, the forward current is increased by several orders of magnitude. The carrier recombination lifetime was the main effects of the change in forward current. The recombination lifetimes after irradiation are decreased from 0.55μ??s to 0.45μs and 0.55μs to 0.48μs, which show that the device performances are sed after X-ray irradiation. Soft X-ray annealing is a new technique for improve the device performance. © 2013 American Scientific Publishers All rights reserved.
Citation
Advanced Science Letters, 19(2), 690-693, 2013