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High-voltage analog front-end circuit for a magnetically-coupled RFID transponder
Author(s)
Rueangsri, Nakarin
Thanachayanont, Apinunt
Date Issued
December 1, 2007
Type
Conference Paper
Abstract
An analog front-end circuit for a 125-kHz RFID transponder has been designed by using a 0.35-μm high-voltage CMOS process. Due to the use of high voltage MOS transistors in all constituent circuits, RF-to-DC power conversion has been achieved at the maximum coupling coefficient without RF limiter circuits, thus saving significant chip area. Furthermore, large load modulation depth is also permitted to achieve longer reading distance, when compared to a conventional low voltage RFID circuit, simulation results are given to verify the circuit. ©2007 IEEE.
Citation
2007 Asia Pacific Conference on Communications Apcc, 335-338, 2007