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An experimental investigation of PN diode electrical characteristics by soft X-ray annealing method
Author(s)
Srithanachai, Itsara
Ueamanapong, Surada
Poyai, Amporn
Niemcharoen, Surasak
Yupapin, Preecha P.
Date Issued
April 1, 2012
Type
Article
Abstract
We present new experimental results for the electrical behaviors of PN junction diodes irradiated by X-rays. The currentvoltage (IV) characteristics of the PN junction diodes were measured at room temperature. The reverse and forward current before and after irradiation can be explained relative to the following parameters: carrier generation lifetime (τg), ideality factor (n), series resistance (Rs), and sheet resistance (ρ). After irradiation at 40 and 55 keV, a small increment in the diode leakage current was seen, while at 70 keV of exposure, the leakage current was slightly decreased. On the other hand, the forward current was dramatically increased by about three orders of magnitude. In addition, the series resistance of the diodes was confirmed to be positively modified by the use of the soft X-ray annealing method. © 2011 Elsevier Ltd. All rights reserved.
Citation
Optics and Laser Technology, 44(3), 635-639, 2012