A simulation of 3-axis magnetotransistor based on the carrier recombination - Deflection effect

Abstract

This article presents 3 axis magnetotransistor based on the carrier recombination and deflection effect for detecting the magnetic field in B X, BY and BZ direction. The structure composes of four magnetotransistors along with x-axis and y-axis that has a common emitter while all collectors and bases are independent. The output is in the form of difference current of collector and base ΔICB. For vertical field detection, the magnetotransistor uses the carrier deflection of the deviation collector current and recombination base current as ΔI CB. For lateral field detection BX and BY it uses a pair of transistors that emitter biased current perpendicular to magnetic field. The output response is the difference current between collector of one and the base current of the another of a pair transistors as ΔI C(1)B(3) and ΔIC(2)B(4) for BX and B y, respectively. The sensitivity at IE 5 mA, 0-1 T of BX, BY and BZ direction are -0.0248 mA/T, -0.0248 mA/T and 0.0092 mA/T, respectively by TCAD Sentaurus simulation. © 2014 IEEE.