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Reversible thermally stimulated phase transition in amorphous–nanocrystalline β-V2O5 thin films for temperature-sensitive electronics
Author(s)
Date Issued
January 1, 2026
Type
Article
Abstract
V2O5 thin films are significant for next-generation temperature-sensitive electronic devices owing to notable phase stability and reversibility. Optimizing phase characteristics toward reversible low-temperature transitions enhances device performance. In this study, thin films of amorphous–nanocrystalline β-V2O5 were deposited on glass substrates using the inclined magnetron head in radio-frequency magnetron sputtering under an O2 reactive gas. The effects of thermal stimulation (heating to 400 °C, followed by cooling) were investigated for an as-deposited film prepared at 7.5 % O2 and for two annealed films deposited at 7.5 % and 10 % O2. The annealed films were annealed at 300 °C before thermal stimulation. The films were characterized by X-ray diffractometry (XRD), Auger-electron spectroscopy, field-emission electron microscopy, Van der Pauw and Hall effect measurements, and ultraviolet–visible spectroscopy. The as-deposited film exhibited insulating behavior, whereas the annealed films at 7.5 % and 10 % O2 demonstrated n-type and p-type conductivities, respectively, accompanied by decreased intensity of the V LMM Auger peak. Before thermal stimulation, the as-deposited film was highly amorphous, whereas the annealed films comprised the β-monoclinic phase. Thermal stimulation caused mixed β-monoclinic and β-tetragonal symmetries for all films and induced significant changes in surface morphology, except for the annealed film at 7.5 % O2. Variations in carrier density and bandgap energy indicated that thermal energy promoted oxygen vacancies but reduced vanadium vacancies in the film structure. In situ XRD analysis demonstrated the phase stability and reversible formation of the nanocrystalline β-monoclinic phase, revealing potential for thermally responsive applications requiring repeatable phase behavior.
Citation
Materials Science in Semiconductor Processing, 201, 2026