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Fabrication of amorphous silicon nanocones by bias-enhanced microwave plasma CVD

Author(s)
Chaisitsak, Sutichai
Date Issued
February 25, 2007
Type
Article
DOI
10.1016/j.mseb.2006.11.019
Abstract
We present a simple growth of highly aligned silicon nanocones by using bias-enhanced microwave plasma CVD of gas mixture of hydrogen and methane. SiO2 and nickel films were used as a silicon precursor and a seeding material for patterning cone structure, respectively. SEM studies showed that the nanocones have nanometer-size tips and sub micrometer-size bases. TEM analysis revealed that the nanocones have amorphous structure with nickel on the tips. The model for formation of silicon nanostructures will also be suggested. © 2006 Elsevier B.V. All rights reserved.
Citation
Materials Science and Engineering B, 137(1-3), 205-209, 2007
Subjects

Amorphous silicon

Microwave plasma CVD

Nanocones

Silicon dioxide

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