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Yield analysis by poisson yield model based on the defect analysis with derivative method
Author(s)
Date Issued
January 1, 2014
Type
Conference Paper
Abstract
This paper presented the corresponding between the classical Poisson's yield equation prediction and wafer actual yield on the silicon wafer with 0.8 μm CMOS technology. The defect analysis with derivative method, current - voltage and capacitance-voltage of diode characteristic measurement, is used to define the defect in p-n junction on silicon wafer. The different sampling numbers of chips are used to calculate the yield. Finally the calculated data and actual would be compared and found that at sampling number is 25, the tolerance from actual yield is less than 2%. © 2014 IEEE.
Citation
2014 11th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology Ecti Con 2014, 2014