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Effect of magnetic memory on negative resistance phenomenon in GdBa 2Cu3O7-x superconducting ceramic materials
Author(s)
Titiroongruang, Wisut
Wongsuttitum, Wisit
Iida, Masamori
Date Issued
April 5, 2007
Type
Article
Abstract
The magnetic memory effect in GdBa2Cu3O7-x has been studied. By investigating the current-voltage characteristics, a voltage drop across the superconducting sample is observed on applying an external magnetic field. After the removal of the magnetic field, the voltage continues to decrease. This phenomenon is considered to be a nonvolatile memory effect. The voltage drop increases with applied magnetic flux, but it becomes constant at about 10mT. The voltage drop is ascribed to the trapping of magnetic flux. While negative resistance occurs, the memorized state affects directly the magnitude of the differential voltage (ΔV), which is defined as the difference between threshold voltage and sustaining voltage. The mechanism of the memory effect and negative resistance can be sufficiently explained by the hypothesized macrostructure model of GdBa2Cu3G 7-x superconducting ceramic materials. © 2007 The Japan Society of Applied Physics.
Citation
Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers, 46(4 A), 1474-1477, 2007