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  4. Experimental Study on Flexible Bismuth Telluride Thin Films Deposited by DC Sputtering at Different Powers
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Experimental Study on Flexible Bismuth Telluride Thin Films Deposited by DC Sputtering at Different Powers

Author(s)
Kianwimol, Supasak
Wanarattikan, Pornsiri
Sakdanuphab, Rachsak
Pluengphon, Prayoonsak
Bovornratanaraks, Thiti
Sakulkalavek, Aparporn
Date Issued
June 15, 2019
Type
Article
DOI
10.1007/s11664-019-07100-1
Abstract
Bismuth telluride (Bi 2 Te 3 ) thin films have been deposited onto polyimide sheet substrates by direct-current (DC) magnetron sputtering at different powers and their microstructure, composition, and electrical and thermoelectrical properties studied. The experimental results indicated that the sputtering power was the key parameter determining their thermoelectric properties. X-ray diffraction analysis confirmed the highly (015) preferred orientation of the films. The Te content and grain size depended on the sputtering power. The power factor of Bi 2 Te 3 deposited by DC sputtering at power of 60 W was comparable to that obtained for highly (00l) Bi 2 Te 3 thin film.
Citation
Journal of Electronic Materials, 48(6), 3490-3496, 2019
Subjects

DC sputtering

Flexible bismuth tell...

sputtering power

thermoelectric thin f...

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