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Characterization of junction parameters in n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-type silicon heterojunctions
Author(s)
Sittimart, Phongsaphak
Nopparuchikun, Adison
Onsee, Peeradon
Duangrawa, Asanlaya
Teakchaicum, Sakmongkon
Date Issued
January 1, 2018
Type
Conference Paper
Abstract
The current density-voltage curves of n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/p-type silicon heterojunctions were measured and analyzed at different temperatures. Based on computation using TE theory, the ideality factor values were 1.12 at 300 K and 5.44 at 80 K. The barrier height values were 0.69 eV at 300 K and 0.20 eV at 80 K. These parameters are in agreement with those computed using Chueng's and Norde's methods. The series resistance (Rs) computed by Chueng's method were 300.88 Ω at 300 K and 4.29 MΩ at 80 K. These Rs values are equal to those computed using Norde's method.
Citation
Materials Today Proceedings, 5(5), 10970-10978, 2018