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The effects of temperature and device demension of MOSFETs on the DC characteristics of CMOS inverter
Author(s)
Date Issued
October 2, 2012
Type
Conference Paper
Abstract
The CMOS fabrication technology requires both n-channel (NMOS) and p-channel (PMOS) transistors be built on the same substrate. To ensure the reliability of the circuit performance over the temperature range, the circuits must be designed accommodate the basic variations parameters as a function of parameter. The temperature dependence of the MOSFET parameters as well as the small dimension effects on the dc characteristics of submicrometer CMOS inverters operated over the temperature range of 27- 125 degree Celsius are presented. The results show that the threshold voltage temperature coefficient (TCV) of both devices increased as the channel width decreased. PMOS has a larger affect more than NMOS because of a buried channel device. The Voltage Transfer Characteristics (VTC) of an inverter shows a symmetrical gate at WR is 2.0. However, the narrow channel effect, threshold voltage matching and ratio B R are key problem of CMOS inverter worked. Finally, these results will support the process engineer, circuit designer to improve device performance in the next fabrication. © 2012 IEEE.
Citation
2012 9th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology Ecti Con 2012, 2012