Dual magnetodiode

Abstract

This paper presents magnetodiode which the structure consists of two pn junction diodes. The anodes are common together and the cathodes are symmetrical separated. It is designed, fabricated and measured the magnetic responses. The mechanism is mainly carrier deflection of injected carrier from the common anode by forward biasing toward to the separated cathode. When magnetic field is applied perpendicular to the device surface, the current difference caused by Hall effect and Lorentz force is linearly changed with the magnetic field density at any applied current. It can detect both the direction and magnitude of magnetic field.