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Production of p-Type Si/n-Type β-FeSi2 Heterojunctions Using Facing-Targets Direct-Current Sputtering and Evaluation of Their Resistance and Interface State Density
Author(s)
Chaleawpong, Rawiwan
Charoenyuenyao, Peerasil
Nopparuchikun, Adison
Sittimart, Phongsaphak
Nogami, Tomohiro
Yoshitake, Tsuyoshi
Date Issued
October 24, 2018
Type
Article
Abstract
Without a post-annealing procedure, the β-FeSi2 thin films are epitaxially grown on Si(111) wafer substrates via facing-targets direct-current sputtering. During epitaxial growth, the temperature for heating of substrates is maintained at 600 °C. The resultant p-type Si/n-type β-FeSi2 heterojunctions are produced. At room temperature, a large leakage current under an applied reverse bias voltage together with a small photo-detective performance is observed from the measured dark and irradiated current density–voltage curves of the created heterojunctions. Both of the conductance–voltage (G/ω–V) and capacitance–voltage (C–V) measurements at different frequencies (f) in the range of 5 kHz–1 MHz are performed in the dark at room temperature. The interface state density (Nss) and series resistance (Rs) in the created p-type Si/n-type β-FeSi2 heterojunctions are computed and analyzed from the measured C–V–f and G/ω–V–f curves. Nss is found to be 3.48 × 1012 eV−1 cm−2 at 5 kHz and decreased to 4.68 × 1011 eV−1 cm−2 at 1 MHz. Moreover, the values of Rs at zero bias are 2.21 kΩ at 5 kHz and 13.66 Ω at 1 MHz. These results review the presence of Nss and Rs in the created heterojunctions, and they can be the cause to degrade the heterojunction performance.
Citation
Physica Status Solidi A Applications and Materials Science, 215(20), 2018