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Co-existence of F and Sb dopants in transparent conducting SnO2 thin films prepared by ultrasonic spray pyrolysis method
Author(s)
Wongcharoen, Ngamnit
Gaewdang, Thitinai
Date Issued
December 1, 2007
Type
Conference Paper
Abstract
Thin films of undoped, fluorine(F)-doped, antimony (Sb)-doped, fluorine and antimony co-doped SnO2 thin films were prepared by ultrasonic spray pyrolysis technique using SnCl2, NH4F and SbCl3 as precursors of Sn, F and Sb elements respectively. In F and Sb co-doped SnO2 films, the proportions of F and Sb to Sn in starting solution were found to be 15 and 2 wt%. XRD patterns showed that the preferred orientation of undoped, SnO2:F, SnO2:Sb and SnO 2:F, Sb was dependent on the doping concentration and on annealing atmosphere. The variation of doping concentration and preferred orientation of the films was reflected in their morphology as investigated by SEM. The annealed SnO2:F, Sb films showed the lower transmission value than the value obtained in the as-prepared SnO2:F, Sb films. Photoluminescence spectra of the undoped SnO2 films showed a broad emission band peaking around 400, 430, and 520 nm. This emission band may be attributed to oxygen vacancy and surface defects.
Citation
Ises Solar World Congress 2007 Ises 2007, 2, 1269-1274, 2007