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    Optimal AIN film deposition conditions for enhancing surface corrosion resistance and silver appearance
    This study investigates the development of AlN thin-film protective coatings for enhancing the corrosion resistance, surface hardness, and color stability of Ag 925 substrates used in decorative and wearable applications. AlN coatings were deposited by reactive DC magnetron sputtering, and the influences of working pressure and film thickness on bonding chemistry, oxygen incorporation, optical appearance, and artificial-sweat corrosion resistance were systematically evaluated. Increasing the working pressure promoted Al–O bond formation and noticeable surface discoloration, consistent with enhanced oxygen uptake that disrupted the near-surface Al–N bonding network. In contrast, films deposited within a moderate pressure window (2.5–7.5 × 10<sup>−1</sup> Pa) exhibited minimal color change (ΔE < 3), maintained stable Al–N bonding characteristics, and achieved a hardness of approximately 5.2 GPa. Film thickness further governed the protective performance: ultrathin AlN layers provided only limited resistance, whereas coatings thicker than ~ 300 nm significantly improved surface resistance, as supported by the reduced chloride-induced discoloration (ΔE decreased from ~ 33.6 to ~ 11) and the effective suppression of Ag and Cu oxidation, as confirmed by FE-SEM/EDS analysis. These results demonstrate that both an optimal working pressure regime and a sufficiently thick coating (> 300 nm) are essential for achieving long-term color stability and corrosion resistance in wearable silver applications.
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    Sputter-deposited AlN coatings for enhanced tarnish resistance and mechanical durability of silver jewelry
    Silver jewelry is prone to surface tarnishing caused by sulfur-containing species in ambient environments. In this study, a transparent aluminum nitride–based thin film was deposited by magnetron sputtering and evaluated as a protective barrier against silver tarnishing. Sheets of 99.9% pure silver were coated under various nitrogen flow conditions to optimize film composition and performance. An appropriate nitrogen flow rate of 25 standard cubic centimeters per minute (sccm), corresponding to an N₂/Ar gas ratio of approximately 1:1, was identified for forming AlN-rich films, while an AlN-based film thickness in the range of 80–110 nm was found to be suitable for jewelry protection. X-ray photoelectron spectroscopy analysis showed that insufficient nitrogen availability suppresses complete nitridation, resulting in residual metallic aluminum, which readily reacts with residual oxygen and moisture, increasing the oxygen content in the films. At an N₂ flow rate of 25 sccm, metallic aluminum was suppressed and the films were dominated by Al–N bonding with minor oxygen incorporation, accompanied by the development of a polycrystalline structure. Nanoindentation measurements performed on the 110 nm-thick film yielded a peak hardness of approximately 3.6 GPa, indicating enhanced mechanical durability compared with uncoated silver. Comparative evaluation of color difference, mechanical hardness, tarnish resistance, and environmental durability demonstrated improved performance of the AlN-coated silver. Finally, the practical applicability of the coating was demonstrated by depositing AlN-based films onto large and intricately designed silver jewelry items, indicating compatibility with industrial-scale processing.
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    Simultaneous O2 plasma and thermal treatment for improved surface conductivity of Cu-Doped SnO2 films
    (2019-08-01) ; ;
    Chanlek, Narong
    ;
    Chirawatkul, Prae
    ;
    Cu-doped SnO<inf>2</inf> thin films were deposited on a glass substrate using radio frequency magnetron sputtering. The effects of varying the O<inf>2</inf> partial pressure during the deposition process and post-O<inf>2</inf> plasma treatment at 420 °C were investigated. Bulk and surface oxidation states were measured by X-ray absorption near-edge structure spectroscopy and X-ray photoelectron spectroscopy. The as-deposited films exhibited oxygen deficient compositions and Cu<sup>+</sup> or Cu<sup>2+</sup> ions, which depend on the deposited O<inf>2</inf> partial pressure. After the post-plasma treatment, the films changed from an amorphous structure into a low crystalline film. X-ray diffraction results indicated substitutional doping, wherein some Sn<sup>4+</sup> ions were replaced with Cu<sup>+</sup> or Cu<sup>2+</sup> ions. The O<inf>2</inf> plasma treatment can remove Cu<sup>2+</sup> and O<sup>2−</sup> from the film surface. The oxygen deficiency defects and Cu<sup>+</sup>- or Cu<sup>2+</sup>- doped present at the surface are the key factors in controlling the sheet resistance of the Cu-doped SnO<inf>2</inf> film. The minimum sheet resistance was obtained after the plasma treatment of the films deposited at a 2% O<inf>2</inf> partial pressure.
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    Improved Transparent Gas Sensor Properties of Cu-Doped SnO2 Films using O2 Plasma Treatment
    Cu-doped SnO<inf>2</inf> films were deposited on glass slide substrate using an RF magnetron sputtering method. The effects of O<inf>2</inf> partial pressures in the deposition process and post O<inf>2</inf> plasma treatment were assessed for optical and sensing properties. O<inf>2</inf> partial pressures from 2% to 10% were assessed. Post-plasma treatment used a 15 mL/min O<inf>2</inf> flow, 450 °C annealing temperature and 30 min treatment time. Optical transmission spectra showed that the films deposited at higher O<inf>2</inf> partial pressures had higher transparency and increased band gaps from 3.08 to 3.78 eV. After O<inf>2</inf> plasma treatment, the films showed better than optical transmission. However, when the O<inf>2</inf> partial pressure increased to 10%, the optical transmission declined slightly because the film had higher surface roughness, smaller crystals and fewer oxygens in the parent rutile tetragonal cells, enhanced the sensor response at room temperature.