Comparison of conventional and LDD NMOSFETs hot-carrier degradation in 0.8 μm CMOS technology

Phongphanchantra, N.; Ruangphanit, A.; Klunngien, N.; Yamwong, W.; Niemcharoen, S.

doi:10.1109/ECTICON.2008.4600557

Comparison of conventional and LDD NMOSFETs hot-carrier degradation in 0.8 μm CMOS technology

Author(s)

Phongphanchantra, N.

Ruangphanit, A.

Klunngien, N.

Yamwong, W.

Niemcharoen, S.

Date Issued

October 6, 2008

Type

Conference Paper

DOI

10.1109/ECTICON.2008.4600557

Abstract

Hot-carrier degradation phenomena in n-channel MOSFETs (NMOSFETs) through the comparison between conventional and lightly doped drain (LDD) structure of 0.8-μm CMOS technology was described. This phenomenon was also observed in the conventional NMOSFETs. This is because of hot-electron trap in the gate accumulating carriers (holes) along the channel region near the drain. That is, these holes effectively increased the effective channel length. On the other hand, the lifetimes of conventional and LDD NMOSFETs defined as how long It takes the transconductance deviation to reach 10 %, which the LDD NMOSFETs are longer than conventional NMOSFETs under the same hot-carrier condition. © 2008 IEEE.

Citation

5th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology Ecti Con 2008, 2, 825-828, 2008