Fabrication and modeling of organic thin-film transistor on glass substrate

Tippo, T.; Thanachayanont, C.; Sahasithiwat, S.; Thanachayanont, A.

doi:10.1109/ECTICON.2008.4600566

Fabrication and modeling of organic thin-film transistor on glass substrate

Author(s)

Tippo, T.

Thanachayanont, C.

Sahasithiwat, S.

Thanachayanont, A.

Date Issued

October 6, 2008

Type

Conference Paper

DOI

10.1109/ECTICON.2008.4600566

Abstract

Organic thin film transistors have been fabricated using pentacene as an active material. Aluminium gate electrodes, pentacene active layers and gold source-drain contacts were fabricated on glass substrate using thermal evaporation though metallic mask. Gate dielectric layers were processed by solution-process spin-coating. The fabricated transistor exhibited the maximum carrier mobility of 0.01 cm²/V-s and the on/off current current ratio over 400. © 2008 IEEE.

Citation

5th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology Ecti Con 2008, 2, 861-864, 2008