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Multiplication of photocurrent in silicon planar metal-semiconductor-metal structures
Author(s)
Khunkhao, S.
Titiroongruang, W.
Niemcharoen, S.
Ruangphanit, A.
Phongphanchanthra, N.
Sato, Kazunori
Date Issued
October 22, 2009
Type
Conference Paper
Abstract
DC photocurrent gain properties of planar metal-semiconductor-metal (MSM) optical sensor structures on have been investigated experimentally. The test structure has two co-planar Mo/n-Si Schottky-barrier junctions on silicon of resistivity 9-12 Ω-cm and the electrode separation is 20 μm. The current-voltage (I-V) characteristics measurements under illumination in visible range showed a rapid increase in photocurrent at higher biases examined. From the temperature, the dependence of I-V characteristics and noise measurements, such photocurrent increase was ascribes to avalanche multiplication of carriers photogenerated in the Schottky junction reversed-biased. From low-frequency (10-50kHz) signal measurements, it was found that multiplication factor larger than 100 at 10kHz and 30 at 50kHz was achieved. ©2009 IEEE.
Citation
2009 6th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology Ecti Con 2009, 1, 448-451, 2009